(China (Mainland))
Product Summary
The MRF281S is an N-Channel Enhancement-Mode Lateral MOSFET designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
Parametrics
MRF281S absolute maximum ratings: (1)Drain–Source Voltage, VDSS: 65 Vdc; (2)Gate–Source Voltage, VGS: ±20 Vdc; (3)Total Device Dissipation, PD: 20W at TC = 25℃; 0.115W/℃ when Derate above 25℃; (4)Storage Temperature Range, Tstg: –65 to +150℃; (5)Operating Junction Temperature, TJ: 200℃.
Features
MRF281S features: (1)Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts; (2)Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power; (3)Excellent Thermal Stability; (4)Characterized with Series Equivalent Large–Signal Impedance Parameters; (5)S–Parameter Characterization at High Bias Levels; (6)Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 MRF281SR1 |
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IC MOSFET RF N-CHAN NI-200S |
Data Sheet |
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MRF20030 |
Other |
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Data Sheet |
Negotiable |
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MRF20030R |
Other |
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Data Sheet |
Negotiable |
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MRF20060 |
Other |
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Data Sheet |
Negotiable |
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MRF20060_1248487 |
Other |
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Data Sheet |
Negotiable |
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MRF20060R |
Other |
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Data Sheet |
Negotiable |
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MRF20060RS |
Other |
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Data Sheet |
Negotiable |
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