(China (Mainland))
Product Summary
The SD2931-11 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. The SD2931-11 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors.
Parametrics
SD2931-11 absolute maximum ratings: (1)V(BR)DSS, Drain source voltage: 125 V; (2)VDGR, Drain-gate voltage (RGS = 1MΩ): 125 V; (3)VGS, Gate-source voltage: ±20 V; (4)ID, Drain current: 20 A; (5)PDISS, Power dissipation: 389 W; (6)Tj, Max. operating junction temperature: 200℃; (7)TSTG, Storage temperature: -65 to +150℃.
Features
SD2931-11 features: (1)Gold metallization; (2)Excellent thermal stability; (3)Common source configuration; (4)POUT = 150 W min. with 14 dB gain @ 175 MHz; (5)Thermally enhanced packaging for lower junction temperatures; (6)GFS and VGS sort marked on unit.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SD2931-11 |
STMicroelectronics |
Transistors RF MOSFET Power POWER R.F. |
Data Sheet |
|
|
||||||||
|
SD2931-11W |
STMicroelectronics |
Transistors RF MOSFET Power RF PWR N-Ch MOS 150W 14dB 175MHz |
Data Sheet |
|
|
||||||||
