Product Summary

The BLF647 is an UHF power LDMOS transistor. It is a silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. The BLF647 is suitable for Communication transmitter applications in the HF to 800 MHz frequency range.

Parametrics

BLF647 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: ±15 V; (3)ID drain current (DC): 18 A; (4)Ptot total power dissipation Tmb ≤ 25 ℃: 290 W; (5)Tstg storage temperature: -65 +150 ℃; (6)Tj junction temperature: 200 ℃.

Features

BLF647 features: (1)High power gain; (2)Easy power control; (3)Excellent ruggedness; (4)Source on underside eliminates DC isolators, reducing common mode inductance; (5)Designed for broadband operation (HF to 800 MHz); (6)Internal input damping for excellent stability over the whole frequency range.

Diagrams

BLF647 dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF647
BLF647
Other

Data Sheet
Negotiable 
BLF647,112
BLF647,112
NXP Semiconductors
Transistors RF MOSFET Power RF LDMOS 150W UHF
Data Sheet
0-1: $96.00
1-25: $91.09
BLF647A
BLF647A
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
Negotiable 
BLF647A,112
BLF647A,112
NXP Semiconductors
Transistors RF MOSFET Power LDMOS TNS
Data Sheet
0-46: $94.83