(China (Mainland))
Product Summary
The PTB20166 is an NPN, common base RF power transistor intended for 24-30 Vdc class C operation from 675 to 925 MHz. Rated at 23 watts minimum output power, the PTB20166 may be used for both CW and pulsed applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
Parametrics
PTB20166 absolute maximum ratings: (1)Collector-Emitter Voltage, VCER: 50 Vdc; (2)Collector-Base Voltage, VCBO: 50 Vdc; (3)Emitter-Base Voltage (collector open), VEBO: 4 Vdc; (4)Collector Current (continuous), IC: 4 Adc; (5)Total Device Dissipation at Tflange = 25℃, PD: 48 Watts; Above 25℃ derate by: 0.27 W/℃; (6)Storage Temperature Range, TSTG: –40 to +150℃; (7)Thermal Resistance (Tflange = 70℃), RθJC: 3.6℃/W.
Features
PTB20166 features: (1)Specified at 28 Volt, 925 MHz; (2)Class C Characteristics; (3)55% Min Collector Efficiency at 23 Watts; (4)Gold Metallization; (5)Silicon Nitride Passivated.
Diagrams
 |
 PTB20001 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||
|
PTB20002 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||
|
PTB20003 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||
|
PTB20004 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||
|
PTB20005 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||
|
PTB20006 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
|
||||
