(China (Mainland))
Product Summary
The 2SK410 is a Silicon N-Channel MOSFET. The applications of the 2SK410 include HF/VHF power amplifier.
Parametrics
2SK410 absolute maximum ratings: (1)Drain to source voltage: 180 V; (2)Gate to source voltage: ±20 V; (3)Drain current: 8 A; (4)Channel dissipation Pch*1: 120 W; (5)Channel temperature: 150 ℃; (6)Storage temperature: –55 to +150 ℃.
Features
2SK410 features: (1)High breakdown voltage; (2)You can decrease handling current.; (3)Included gate protection diode; (4)No secondary–breakdown; (5)Wide area of safe operation; (6)Simple bias circuitry; (7)No thermal runaway.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK410 |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK4100LS |
Other |
|
Data Sheet |
Negotiable |
|
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 |
2SK4103(TE16L1,NQ) |
|
MOSFET N-CH 500V 5A PW-MOLD |
Data Sheet |
|
|
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|
2SK4101FG |
Other |
|
Data Sheet |
Negotiable |
|
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|
2SK4101FS |
Other |
|
Data Sheet |
Negotiable |
|
||||||
|
2SK4101LS |
Other |
|
Data Sheet |
Negotiable |
|
||||||
 |
2SK4107(F,T) |
Toshiba |
MOSFET N-Ch FET VDSS 500V RDS 0.33 Ohm Yfs 8.5 |
Data Sheet |
Negotiable |
|
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|
2SK4108(F,T) |
Toshiba |
MOSFET N-Ch FET VDSS 500V RDS 0.21 Ohm Yfs 14S |
Data Sheet |
Negotiable |
|
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